Part No.: MPCG-Genius
Traditional TCAD device simulation time periods are too long and inefficiency has been a problem for many users.


Genius: 3D Parallel Device Simulation Software


raditional TCAD device simulation time periods are too long and inefficiency has been a problem for many users. A new generation of 3D parallel device simulation software, Genius, can help customers solve these problems perfectly. Genius is a product that Sui Jingda is proud of. This software embeds advanced parallel computing technology, making the simulation large and efficient. Genius is a commercial TCAD simulation software that spans 10-transistor barriers , making it possible to simulate some circuit elements, such as inverters, 6-tube SRAMs, latches and flip-flops, and the simulation time can be reduced by an order of magnitude. Greatly improved the simulation efficiency.

Genius uses a completely new approach to design that goes beyond other TCAD software on the market today. It has the characteristics of parallelism, compatibility, and extensibility. These advanced concepts are also the original intention of software design. In addition, the Genius program module is built using advanced numerical simulation technology and software development platform.

Genius's parallel computing approach dramatically reduces simulation time, allowing time-cycles to simulate large single devices or circuit blocks containing several devices, eliminating the difficulties of using other TCAD software to handle these problems.


Genius 3D CMOS inverter simulation time and parallel acceleration.

main feature

  • Drift-diffusion model
  • Lattice heat model
  • Energy balance model
  • DC, AC and transient simulation models
  • Circuit/device hybrid simulation model
  • Material library of up to 30 materials
  • Wide range carrier model
  • Impact ionization model
  • Band-band tunneling model
  • Carrier defect capture model
  • Hall Effect
  • 3D ray tracing algorithm
  • Two-dimensional finite element ray algorithm
  • Three-dimensional total dose effect model
  • Device Model Construction Based on GDSII Layout
  • Interact with other major TCAD simulation data

Example: a six-tube SRAM

Modeling and Grid:

Simulation results (potential distribution at a certain time):