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Genius Device Simulator

 

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Genius Device Simulator
TCAD Studio Device Simulator

Part No:MPCOG-CAD-Simulator-GDS
 

If your TCAD simulations are taking too much time, and you wish to improve your productivity, there is finally an option in the market. We are proud to present Genius Device Simulator, the core of our next-generation TCAD solution. With the latest parallel computation technology, Genius is able to handle large problems with 200,000 or more mesh nodes, and speed up the simulation by 10 times or more.

 

SRAM mesh

Fig. 1 Mesh structure of a 6T SRAM simulated with Genius.

 

Genius is a parallel 2D/3D TCAD device simulator, featuring a wide range of advanced physical models and simulation capabilities:

  • Highly scalable parallel computation on shared-memory and distributed computers.

  • Drift-diffusion Model;

  • Temperature Corrected DD and lattice heating;

  • Energy Balance Model;

  • A range of mobility models;

  • A material library with 25 materials;

  • A range of Impact-ionization models;

  • Band-to-band tunneling;

  • Carrier trapping at defects;

  • Raytracing optics

  • 2D Finite-element EM wave optics

  • DC, transient, small signal AC and mixed device/circuit simulation modes;

  • Flexible programming interface for user-defined material models

  • Flexible programming interface for user-defined pre-processing, post-processing and monitoring modules.

  • Interfaces to popular TCAD, CFD and visualization file formats such as TIF, CGNS, and VTK.

Performance Boost with Parallel Computation

As massively parallel computation is becoming affordable and entering mainstream, we believe that any decent software should keep up with the development of computer hardware. Therefore, scalability is one of the top design goals of Genius. Genius is designed to take advantage of parallel computation to handle larger device structures and provide greater throughput. In our test, with a 4-node, 32-core cluster computer, Genius typically provides a speedup between 9x and 10x, as shown in Figure 2. In one test on a 6-T SRAM model with 96,000 mesh nodes (see Fig. 1), the transient simulation of two subsequent write operation was completed in 230 minutes. This capability and performance is unparalleled in the TCAD software market.

Run time reduction in parallel simulation.

parallel speedup

Fig. 2 Typical run time reduction and simulation speedup achieved on parallel computers.

Parallel computers have become affordable. The above described 32-core cluster is available for USD 10,000, which is much less than the typical annual license cost of commerical TCAD simulators. We offers Genius as a more affordable, yet more powerful TCAD solution. If your device simulation is taking too much time, and you are looking for a 10x speedup, Genius is clearly the choice.

Intuitive User Interfaces

Genius comes with a fully-integrated graphical user interface (VisualTCAD-Basic) for users to create device structures, setup simulation and analyze results intuitively.

Screenshot of the visualization module of VisualTCAD

Fig.3 Screenshot of the visualization module of VisualTCAD-Basic

Flexible License Terms

On the other hand, we offer simplified versions of the Genius simulator to suit every customer’s TCAD need in a reasonable budget. We offer in addition, significant discounts to educational users. For more information on license information.
 

License Options
We offer the following versions of TCAD product under different license agreement.

 

Features

Version
 

Open Source

Lite

Professional

Enterprise

VisualTCAD (GUI)

no

yes

yes

yes

Drift-diffusion solver

yes

yes

yes

yes

Lattice temperature

yes

no

yes

yes

Energy balance solver

yes

no

yes

yes

2D mesh

yes

yes

yes

yes

3D mesh

no

no

yes

yes

Optics (FEM/Raytracing)

yes

no

yes

yes

Circuit+Device simulation

yes

yes

yes

yes

Parallel computation

no

yes (2 CPUs)

yes(4 CPUs)

yes

The exact price would depend on the add-on services requested. However, we are confident to say that our products are very affordable. We offer substantial discounts to educational institutions. Customized versions are available upon request. Please do not hesitate to contact us for a quotation.


Source Code Availability

We believe that there is no secret in physics, and all source code related to physical models are provided along with the simulator. All researchers are welcomed to study and improve the software, and develop new models using the Genius platform.


Open Source Software

In the field of scientific/engineering computing, we strongly believe that secrecy hinders the pursuit of perfection, while monopoly makes it worse. With this belief, the GSS device simulator which based on BSD license a few years ago.

The Genius device simulator. Currently this is a cut-down version of the commercial version, and is released under the GPLv3 license. As the notion of open-source is unprecedented in the TCAD business, we will take gradual steps towards a more open development model.
 

Genius runs on Microsoft® Window®, Linux®, Mac OS X® and many other Unix® like platforms. Contact us for Demo versions and more information.

 

Applications

Simulating a 6T SRAM

Simulating circuit cell in TCAD has never been so simple. You can create the 3D model from mask layout data, and start simulating at stunning speed with the help from parallel computation.

 

In this particular example, the SRAM cell has about 96,000 mesh nodes. We have done simulations with 200,000 nodes and nothing is stopping us from simulating even larger models. Just let us know your cutting-edge TCAD needs, and together we shall explore in the frontier.

For a tutorial on simulating circuit cells with Genius, please Contact us .


ESD Protection Devices

Electrostatic discharge is a common cause of IC failure. ESD protection circuits are usually placed near the I/O pads to guard the internal devices from ESD related damages. Since ESD is a high current event, ESD protection circuits should be able to sink high level of currents without being permanently damaged. Additionally, in CMOS IC, devices inthe ESD protection should be compatible with the normal CMOS fabrication technology. The gate grounded NMOS(ggNMOS) transistor satisfies both requirements, and is a popular ESD protection device.

 

Lattice temperature

Fig. 1 Lattice temperature of a ggNMOS device during snapback.

We describe the procedure and results of ggNMOS simulation with GENIUS. We demonstrate that GENIUS is capable of simulating ggNMOS with impact ionization model, lattice heating model and thermal boundary conditions. Snapback phenomena in the IV trace is clearly observed. Hotpot due to lattice heating can be easily identified in postprocessing.

It is possible to simulate ggNMOS in three-dimension with GENIUS, although the problem is significantly more time consuming. In all cases, we recommend the users to take advantage of the parallel computing capability of GENIUS to reduce simulation time.

 

Contact us to download the source code packages of open source software.

 

     Download Genius Device Simulator Specification 
 

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